Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.9A, 10V |
|---|---|
| Konfiguration | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 12.1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1021pF @ 30V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Power - Max | 2.15W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SO |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |