Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 80Ohm @ 50mA, 10V |
|---|---|
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Hersteller | Diodes Incorporated |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 70mA (Ta) |
| Max. Verlustleistung | 625mW (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Hersteller-Gehäuse | TO-92 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|