Allgemein
| Capacitance @ Vr, F | 900pF @ 4V, 1MHz |
|---|---|
| Hersteller | Diodes Incorporated |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | Schottky |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 900pF @ 4V, 1MHz |
|---|---|
| Hersteller | Diodes Incorporated |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 570 mV @ 18 A |
| Current - Average Rectified (Io) | 9A |
| Current - Reverse Leakage @ Vr | 800 µA @ 40 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | DO-201AD, Axial |
| Hersteller-Gehäuse | DO-201AD |
| Operating Temperature - Junction | -65°C ~ 150°C |
|---|