Allgemein
| Basis-Teilenummer | DXTP58100 |
|---|---|
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 185mV @ 200mA, 2A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | DXTP58100 |
|---|---|
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 185mV @ 200mA, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 2V |
| Power - Max | 690 mW |
| Frequency - Transition | 135MHz |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 3-UDFN Exposed Pad |
| Hersteller-Gehäuse | U-DFN2020-3 (Type B) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|