Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5A, 10V |
|---|---|
| Konfiguration | 2 N-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 11.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 683pF @ 50V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 100V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Power - Max | 3W (Ta), 37W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-PowerTDFN |
| Hersteller-Gehäuse | PowerDI5060-8 (Type UXD) |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |