Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
|---|---|
| Basis-Teilenummer | DMT8008 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 40 V |
| Hersteller | Diodes Incorporated |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Drain-Source-Spannung | 80 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 32A (Tc) |
| Max. Verlustleistung | 1.3W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|