DMT35M8LDG-13

Name: DMT35M8LDG-13
Brand: Diodes Incorporated

Analog & Leistungselektronik

MOSFET 2N-CH 30V 17A PWRDI3333

Aktiv8-PowerVDFNAnalog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Konfiguration	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Gate Charge (Qg) (Max) @ Vgs	22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1510pF @ 15V, 1032pF @ 15V
Hersteller	Diodes Incorporated
Montageart	Surface Mount
Product Status	Active
Technologie	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.9V @ 250µA

Drain-Source-Spannung	30V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 15.3A (Ta)
Power - Max	980mW (Ta), 2W (Tc)

Betriebstemperatur	-55°C ~ 150°C (TJ)