Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 7mOhm @ 9A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 15 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 3.7V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 14.1A (Ta) |
| Max. Verlustleistung | 800mW (Ta) |
| Gehäuse | Cut Tape (CT) Tape & Box (TB) |
|---|
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |