Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 62mOhm @ 4.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 266 pF @ 50 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Max. Verlustleistung | 800mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 6-UDFN Exposed Pad |
| Hersteller-Gehäuse | U-DFN2020-6 (Type F) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|