Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 9mOhm @ 10A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2085 pF @ 50 V |
| Hersteller | Diodes Incorporated |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 42A (Tc) |
| Max. Verlustleistung | 1.4W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|