Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 10A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6807 pF @ 15 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Max. Verlustleistung | 3.9W (Ta) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|---|---|
| Hersteller-Gehäuse | TO-252 (DPAK) |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|