Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5392 pF @ 10 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount, Wettable Flank |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Max. Verlustleistung | 1.95W |
| Package / Case | 8-PowerTDFN |
|---|---|
| Hersteller-Gehäuse | PowerDI5060-8 (Type UX) |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|