Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8Ohm @ 100mA, 5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 42 pF @ 30 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Drain-Source-Spannung | 65 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 5V |
| Current - Continuous Drain (Id) @ 25°C | 215mA (Ta) |
| Max. Verlustleistung | 700mW |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 3-UFDFN |
| Hersteller-Gehäuse | X1-DFN1006-3 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|