Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 53.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2569 pF @ 30 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 18.2A (Tc) |
| Max. Verlustleistung | 2W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Hersteller-Gehäuse | SOT-223-3 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|