Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 48mOhm @ 1A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 218 pF @ 10 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | -6V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Max. Verlustleistung | 860mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 4-XFBGA |
| Hersteller-Gehäuse | X1-DSN1010-4 (Type C) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
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