Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3Ohm @ 200mA, 2.7V |
|---|---|
| Basis-Teilenummer | DMN55 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Drain-Source-Spannung | 50 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.7V |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Max. Verlustleistung | 350mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SOT-23-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|