Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4Ohm @ 100mA, 4V |
|---|---|
| Basis-Teilenummer | DMN55 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 50 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 160mA (Ta) |
| Max. Verlustleistung | 200mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-523 |
| Hersteller-Gehäuse | SOT-523 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|