Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 195mOhm @ 300mA, 4.5V |
|---|---|
| Konfiguration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 128.6pF @ 25V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.11A (Ta) |
| Power - Max | 1.39W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-XFDFN Exposed Pad |
| Hersteller-Gehäuse | X2-DFN1310-6 (Type B) |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |