Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4A, 10V |
|---|---|
| Konfiguration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 151pF @ 10V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.8A |
| Power - Max | 1.1W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | PowerDI3030-8 |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |