Allgemein
| Basis-Teilenummer | DMN1002 |
|---|---|
| Konfiguration | 2 N-Channel (Dual) Common Drain |
| Gate Charge (Qg) (Max) @ Vgs | 68.6nC @ 4V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | DMN1002 |
|---|---|
| Konfiguration | 2 N-Channel (Dual) Common Drain |
| Gate Charge (Qg) (Max) @ Vgs | 68.6nC @ 4V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
|---|
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, No Lead |
| Hersteller-Gehäuse | X4-DSN3118-6 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|