Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V |
|---|---|
| Konfiguration | 2 N and 2 P-Channel (Full Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 4.5V, 5.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 574pF @ 20V, 587pF @ 20V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 40V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 3.7A (Ta) |
| Power - Max | 1.5W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOIC |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |