Allgemein
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V |
|---|---|
| Konfiguration | N and P-Channel Complementary |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 1.04nC @ 10V, 1.1nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 41pF @ 30V, 40pF @ 25V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3V @ 250µA |
