Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V |
|---|---|
| Konfiguration | N and P-Channel Complementary |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1184pF @ 15V, 1188pF @ 15V |
| Hersteller | Diodes Incorporated |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc), 15A (Tc) |
| Power - Max | 900mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | PowerDI3333-8 |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |