Allgemein
| Capacitance @ Vr, F | 250pF @ 4V, 1MHz |
|---|---|
| Hersteller | Comchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | Schottky |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 250pF @ 4V, 1MHz |
|---|---|
| Hersteller | Comchip Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 500 µA @ 200 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Gehäuse | Tape & Box (TB) |
|---|---|
| Package / Case | DO-201AA, DO-27, Axial |
| Hersteller-Gehäuse | DO-27 |
| Operating Temperature - Junction | -50°C ~ 175°C |
|---|