Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 105mOhm @ 6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1535 pF @ 15 V |
| Hersteller | Comchip Technology |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Max. Verlustleistung | 1.7W (Ta), 10.4W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerWDFN |
| Hersteller-Gehäuse | 8-PDFN (SPR-PAK ) (3.3x3.3) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
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