Allgemein
| Capacitance @ Vr, F | 100pF @ 4V, 1MHz |
|---|---|
| Hersteller | Comchip Technology |
| Montageart | Through Hole |
| Verpackung | Tape & Box (TB) |
| Teilestatus | Aktiv |
| Technologie | Standard |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 100pF @ 4V, 1MHz |
|---|---|
| Hersteller | Comchip Technology |
| Montageart | Through Hole |
| Verpackung | Tape & Box (TB) |
| Teilestatus | Aktiv |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 6 A |
| Current - Average Rectified (Io) | 6A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | R-6, Axial |
|---|---|
| Hersteller-Gehäuse | R-6 |
| Operating Temperature - Junction | -55°C ~ 125°C |
|---|