Allgemein
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
|---|---|
| Hersteller | Central Semiconductor Corp |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 15 ns |
| Technologie | Schottky |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
|---|---|
| Hersteller | Central Semiconductor Corp |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 15 ns |
| Technologie | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 200 µA @ 40 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 6-XFDFN Exposed Pad |
| Hersteller-Gehäuse | TLM563 |
| Operating Temperature - Junction | -65°C ~ 150°C |
|---|