MOSFET N-CH 60V 280MA TLM621
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.592 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Hersteller | Central Semiconductor Corp |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | 40V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Max. Verlustleistung | 900mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 6-PowerVFDFN |
| Hersteller-Gehäuse | TLM621 |
| Betriebstemperatur | -65°C~150°C(TJ) |
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