MOSFET N-CH 11A 30V BARE DIE
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 15 V |
| Hersteller | Central Semiconductor Corp |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Max. Verlustleistung | 2.5W |
| Gehäuse | Tray |
|---|---|
| Package / Case | Die |
| Hersteller-Gehäuse | Die |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|