Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 430mA, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.88 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 55 pF @ 25 V |
| Hersteller | Central Semiconductor Corp |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | 8V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
| Max. Verlustleistung | 100mW (Ta) |
| Gehäuse | Box |
|---|---|
| Package / Case | SC-101, SOT-883 |
| Hersteller-Gehäuse | SOT-883 |
| Betriebstemperatur | -65°C~150°C(TJ) |
|---|