Allgemein
| Basis-Teilenummer | 2N3810 |
|---|---|
| Hersteller | Central Semiconductor Corp |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 100µA |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 2N3810 |
|---|---|
| Hersteller | Central Semiconductor Corp |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 100µA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
|---|---|
| Current - Collector (Ic) (Max) | 50mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Power - Max | 600mW |
| Frequency - Transition | 100MHz |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-78-6 Metal Can |
| Hersteller-Gehäuse | TO-78-6 |
| Betriebstemperatur | -65°C ~ 200°C (TJ) |
|---|