Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
|---|---|
| FET Feature | Current Sensing |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
| Hersteller | Cambridge GaN Devices |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | ICeGaN™ |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | +20V, -1V |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | 8-DFN (5x6) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|