Allgemein
| Capacitance @ Vr, F | 201pF @ 1V, 1MHz |
|---|---|
| Hersteller | Bourns Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | SiC (Silicon Carbide) Schottky |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 201pF @ 1V, 1MHz |
|---|---|
| Hersteller | Bourns Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Average Rectified (Io) | 6A |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Hersteller-Gehäuse | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|