Allgemein
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
|---|---|
| Hersteller | Bourns Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Technologie | SiC (Silicon Carbide) Schottky |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
|---|---|
| Hersteller | Bourns Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Technologie | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Geschwindigkeit | No Recovery Time > 500mA (Io) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | TO-263 |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|