ANBON SEMICONDUCTOR (INT'L) LIMITED
N-CHANNEL ENHANCEMENT MODE MOSFE
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 18mOhm @ 6.8A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.05 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 888 pF @ 10 V |
| Hersteller | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Max. Verlustleistung | 1.2W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SOT-23 |
| Betriebstemperatur | 150°C(TJ) |
|---|