ANBON SEMICONDUCTOR (INT'L) LIMITED
N-CHANNEL SILICON CARBIDE POWER
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1475 pF @ 1000 V |
| Hersteller | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Max. Verlustleistung | 192W (Tc) |
| Package / Case | TO-247-3 |
|---|---|
| Hersteller-Gehäuse | TO-247-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|