Alpha & Omega Semiconductor Inc
MOSFET N-CH 100V 22.5/41A TO220F
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
| Hersteller | Alpha & Omega Semiconductor Inc. |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | AlphaSGT™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 22.5A (Ta), 41A (Tc) |
| Max. Verlustleistung | 8.3W (Ta), 27.5W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Hersteller-Gehäuse | TO-220F |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
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