Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 224 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11135 pF @ 40 V |
| Hersteller | Alpha & Omega Semiconductor Inc. |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Drain-Source-Spannung | 80 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20.5A (Ta), 140A (Tc) |
| Max. Verlustleistung | 2.1W (Ta), 333W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|