Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 11mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3010 pF @ 75 V |
| Hersteller | Alpha & Omega Semiconductor Inc. |
| Montageart | Through Hole |
| Product Status | Last Time Buy |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5.1V @ 250µA |
| Drain-Source-Spannung | 150 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Ta), 106A (Tc) |
| Max. Verlustleistung | 8.3W (Ta), 277W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|