Alpha & Omega Semiconductor Inc
MOSFET N-CH 700V 1.1A/4.6A 8DFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 354 pF @ 100 V |
| Hersteller | Alpha & Omega Semiconductor Inc. |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | aMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Drain-Source-Spannung | 700 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta), 4.6A (Tc) |
| Max. Verlustleistung | 4.1W (Ta), 78W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | 8-DFN-EP (5x6) |
| Betriebstemperatur | -55°C~150°C(TJ) |
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