Alpha & Omega Semiconductor Inc
SILICON CARBIDE MOSFET, ENHANCEM
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 85mOhm @ 20A, 15V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62.3 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1716 pF @ 800 V |
| Hersteller | Alpha & Omega Semiconductor Inc. |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +18V, -8V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 40.3A (Tc) |
| Max. Verlustleistung | 187.5W (Tj) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|