Allgemein
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 461 pF @ 100 V |
| Hersteller | Alpha & Omega Semiconductor Inc. |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Serie | aMOS5™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |