YJS4407A

Yangzhou Yangjie Electronic Technology Co.,Ltd

YJS4407A

Datasheet

Analog & Power

P-CH MOSFET 30V 12A SOP-8

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10.5mOhm @ 12A, 20V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2152 pF @ 15 V
ManufacturerYangzhou Yangjie Electronic Technology Co.,Ltd
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id2.8V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 20V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation3.2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-55°C~150°C(TJ)