YJJ09N03A

Yangzhou Yangjie Electronic Technology Co.,Ltd

YJJ09N03A

Datasheet

Analog & Power

N-CH MOSFET 30V 9A SOT-23-6L

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1015 pF @ 15 V
ManufacturerYangzhou Yangjie Electronic Technology Co.,Ltd
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Max Power Dissipation1.25W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6L

Environmental

Operating Temperature-55°C~150°C(TJ)