YJG95G06A

Yangzhou Yangjie Electronic Technology Co.,Ltd

YJG95G06A

Datasheet

Analog & Power

N-CH MOSFET 60V 95A PDFN5060-8L

Active8-PowerLDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.5mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5950 pF @ 25 V
ManufacturerYangzhou Yangjie Electronic Technology Co.,Ltd
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C155A (Tc)
Max Power Dissipation120W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerLDFN
Supplier Device Package8-PDFN (5x6)

Environmental

Operating Temperature-55°C~150°C(TJ)