YJG15N15B

Yangzhou Yangjie Electronic Technology Co.,Ltd

YJG15N15B

Analog & Power

N-CH MOSFET 150V 15A PDFN5060-8L

Active8-PowerLDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds625 pF @ 75 V
ManufacturerYangzhou Yangjie Electronic Technology Co.,Ltd
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Max Power Dissipation45W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerLDFN
Supplier Device Package8-PDFN (5x6)

Environmental

Operating Temperature-55°C~150°C(TJ)