Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9056 pF @ 20 V |
| Manufacturer | YAGEO XSEMI |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | XP4N2R1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 37.5A (Ta), 170A (Tc) |
| Max Power Dissipation | 5W (Ta), 104W (Tc) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerLDFN |
| Supplier Device Package | PMPAK® 5 x 6 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|