XP3P050AG

YAGEO XSEMI

XP3P050AG

Datasheet

Analog & Power

MOSFET P-CH 30V 4.1A SOT89

ActiveTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 4A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 15 V
ManufacturerYAGEO XSEMI
Mounting TypeSurface Mount
Product StatusActive
SeriesXP3P050A
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta)
Max Power Dissipation1.25W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-243AA
Supplier Device PackageSOT-89

Environmental

Operating Temperature-55°C ~ 150°C (TJ)