XP10NA1R5TL

YAGEO XSEMI

XP10NA1R5TL

Datasheet

Analog & Power

MOSFET N-CH 100V 300A TOLL

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16960 pF @ 80 V
ManufacturerYAGEO XSEMI
Mounting TypeSurface Mount
Product StatusActive
SeriesXP10NA1R5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Max Power Dissipation3.75W (Ta), 333W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
Supplier Device PackageTOLL

Environmental

Operating Temperature-55°C ~ 175°C (TJ)