E3M0120090J-TR

Wolfspeed, Inc

E3M0120090J-TR

Datasheet

Analog & Power

SIC, MOSFET, 120M, 900V, TO-263

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs155mOhm @ 15A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds414 pF @ 600 V
ManufacturerWolfspeed, Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesE
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max)+15V, -4V
Vgs(th) (Max) @ Id3.5V @ 3mA

Electrical

Drain-to-Source Voltage900 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Max Power Dissipation83W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackageTO-263-7

Environmental

Operating Temperature-55°C ~ 150°C (TJ)